Abstract: This paper evaluates the impact of SiC and GaN transistors on motor drive efficiency, switching frequency, and thermal performance.
Content Overview:

1. Device Physics Comparison

• SiC MOSFETs vs. Si IGBTs: On-resistance and switching loss trade-offs.

• GaN HEMTs: High-frequency operation limits and gate drive challenges.

2. Inverter Topology Optimization

• Multi-level inverters (e.g., neutral-point-clamped) for harmonic reduction.

• Soft-switching techniques to mitigate EMI in high-frequency designs.

3. Thermal Management

• Compact heat sink designs for high-power density inverters.

• Phase-change materials vs. liquid cooling for thermal stability.

4. Case Study

• Performance benchmarking of a 50 kW SiC-based inverter in a servo drive application.